microSD Card
The micro SD Card is a very compact Flash memory card format which is electrically identical to the SD memory card.
Thanks to the development of highly integrated systems the microSD format is gaining in importance also in embedded environments.
Industrial Grade microSD cards even function also under etreme environmental pressures and are suitable for a wide range of applications especially for design with limited space.
They are built as encapsulated SIP (System in Package) and therefore they are extremely resilent.
APdate offers microSD cards from ATP, Delkin, InnoDisk and Smart Modular for for all areas of application also with extended temperature range. On request we offer also SD cards of other munufacturer.
- Reliability, icrease in data integrity
- Additional security features
- High Data transfer rate
- Automatic error correction
- MLC or SLC Technology
- Minimum space required
- No moving parts
- SIP Technology
- Non-volatile memory, data is not lost when power is turned off
- Low power-consumption
- 7-pin serial SPI interface
- Simple controlling
- 2,7V up to 3,6V power requirenment
- Extremely shock and vibration resistant
ATP
Industrial
SLC MicroSD Card
Delkin Industrial
SLC MicroSD Card 3.0
Delkin
SLC MicroSD Card 3.0
InnoDisk
SLC MicroSD Card
Smart Modular
SLC MicroSD Card
ATP
aMLC MicroSD Card
ATP
MLC MicroSD Card
Delkin Utility
MLC Micro SD Card 3.0
InnoDisk
MicroSD 3ME Card
Smart Modular
MLC MicroSD Card
| Dimension | 11 x 15 x 1mm |
| Interface | SD 2.0 or SPI |
| Data transfer rate | max 20MB/s Sustained Read¹ max. 18MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 512MB, 1, 2, 4, 8GB |
| Flash Technology | Single Level Cell (SLC) |
| Additional configuration | IP57 CPRM Support Password protection (optional) |
| Flash Management | ECC, Static and Dynamic Wear Leveling Bad Block Management AutoRefresh Read Disturb Protector |
| Data integrity | 5 years / 10 years (512MB, 1GB) |
| Voltage | 2,7 – 3,6V |
| Power consumption | typical 50mA max.no information Standby: max 0,2mA |
| Temperature range | -40°C up to 85°C (Industrial Temp.) |
| MTBF | >5 Mio. hours |
| Endurance (TBW) | 12TB (512MB ) up to 192TB (8GB) Sequential Write |
| Warranty | 5 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 downward compatible to SD 2.0 and 1.0 or SPI |
| Data transfer rate | max 27MB/s Sustained Read¹ max. 20MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 512MB, 1, 2, 4, 8, 16GB |
| Flash Technology | Single Level Cell (SLC) |
| Additional configuration | Password protection (optional) Customization |
| Flash Management | Near-miss ECC, Static and dynamic Wear Leveling Bad Block Management S.M.A.R.T v Read Disturb Management Dynamic Data refresh AES Encryption Engine Firmware Redundancy high degree of safety against currency fluctuations |
| Data integrity | 10 years |
| Voltage | 2,7 – 3,6V |
| Power consumption | Write: max. 60mA Read: max. 50mA Idle: max 1,05mA |
| Temperature range | -40°C up to 85°C (Industrial Temp.) |
| MTBF | >2 Mio. hours |
| Endurance (TBW) | 29TB (512MB ) up to 936TB (16GB) Sequential Write |
| Endurance | 5 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 downward compatible to SD 2.0 and 1.0 or SPI |
| Data transfer rate | max 21MB/s Sustained Read¹ max. 18MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 128, 256, 512MB, 1, 2, 4GB |
| Flash Technology | Single Level Cell (SLC) |
| Additional configuration | Password protection (optional) CPRM Support Customization |
| Flash Management | ECC, Static and dynamic Wear Leveling Bad Block Management S.M.A.R.T Auto-Read Refresh |
| Data integrity | 10 years |
| Voltage | 2,7 – 3,6V |
| Power consumption | max. 200mA Standby: max 0,25mA |
| Temperature range | -40°C up to 85°C (Industrial Temp.) |
| MTBF | >2 Mio. hours |
| Endurance (TBW) | 7TB (128MB) up to 234TB (4GB) Sequential Write |
| Endurance | 5 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 2.0 or SPI |
| Data transfer rate | max 20MB/s Sustained Read¹ max. 16MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 1, 2, 4, 8GB |
| Flash Technology | Single Level Cell (SLC) |
| Additional configuration | CPRM Support |
| Flash Management | ECC,
Global Wear Leveling Bad Block Management S.M.A.R.T Enhanced Power Cycling |
| Data integrity | 10 years |
| Voltage | 2,7 – 3,6V |
| Power consumption | max. 50mA Idle: max 1,6mA |
| Temperature range | 0°C up to 70°C (Standard Temp.) -40°C up to 85°C (Industrial Temp.) |
| MTBF | >3 Mio. hours |
| Endurance (TBW) | 90TB (1GB) up to 720TB (8GB) Sequential Write |
| Warranty | 5 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 or SPI |
| Data transfer rate | max 21MB/s Sustained Read¹ max. 18MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 1, 2, 4, GB |
| Flash Technology | Single Level Cell (SLC) |
| Additional configuration | CPRM Support Integrierted write protect mechanism Write protect switch Password protection (optional) |
| Flash Management | ECC, Global Wear Leveling Bad Block Management Flash status informationen Protection against voltage drops |
| Data integrity | 10 years |
| Voltage | 2,7 – 3,6V |
| Power consumption | max. 200mA Standby: max 0,25mA |
| Temperature range | -25°C up to 85°C (Standard Temp.) -40°C up to 85°C (Industrial Temp.) |
| MTBF | >3 Mio. hours |
| Endurance (TBW) | 6TB (1GB) up to 24TB (4GB) Sequential Write |
| Warranty | 1 year |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 downward compatible to SD 2.0 and 1.0 or SPI |
| Data transfer rate | up to 73MB/s Sustained Read¹ up to 36MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 4, 8, 16GB |
| Flash Technology | advanced Multi Level Cell (aMLC) |
| Additional configuration | IP57 CPRM Support Write protect switch Password protection (optional) |
| Flash Management | ECC, Static and Dynamic Wear Leveling Bad Block Management S.M.A.R.T Read Disturb Protector AutoRefresh Technology |
| Data integrity | 5 years |
| Voltage | 2,7 – 3,6V |
| Power consumption | Operating: max. 400 (UHS-1 Mode) respectively 800mA (UHS104 Mode) Standby: max. 0,1A |
| Temperature range | -25 up to 85°C (Standard Temp.) |
| MTBF | >3 Mio. hours |
| Endurance (TBW) | 64TB (4GB) up to 256TB (16GB) Sequential Write |
| Warranty | 2 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 downward compatible to SD 2.0 and 1.0 or SPI |
| Data transfer rate | up to 68MB/s Sustained Read¹ up to 24MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 4, 8, 16, 32GB |
| Flash Technology | advanced Multi Level Cell (aMLC) |
| Additional configuration | IP57 CPRM Support Write protect switch Password protection (optional) |
| Flash Management | ECC, Static and Dynamic Wear Leveling Bad Block Management S.M.A.R.T AutoRefresh Technology |
| Data integrity | 5 years |
| Voltage | 2,7 – 3,6V |
| Power consumption | Operating: max. 400 (UHS-1 Mode) respectively 800mA (UHS104 Mode) Standby: max. 0,1A |
| Temperature range | -25 up to 85°C (Standard Temp.) |
| MTBF | >3 Mio. hours |
| Endurance (TBW) | 64TB (4GB) up to 256TB (16GB) Sequential Write |
| Warranty | 2 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 downward compatible to SD 2.0 and 1.0 or SPI |
| Data transfer rate | up to 95MB/s Sustained Read¹ up to 95MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 4, 8, 16, 32, 64GB |
| Flash Technology | Multi Level Cell (MLC) |
| Additional configuration | CPRM Support Password protection (optional) |
| Flash Management | ECC, Static and Dynamic Wear Leveling Bad Block Management S.M.A.R.T Auto Read Refresh Data Clone System DCS (optional) |
| Data integrity | no information |
| Voltage | 2,7 – 3,6V |
| Power consumption | Operating: max. 400mA Standby: max. 1000µA |
| Temperature range | -25 up to 85°C (Standard Temp.) |
| MTBF | >3 Mio. hours |
| Endurance (TBW) | 12TB (4GB) up to 192TB (64GB) Sequential Write |
| Warranty | 3 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 downward compatible to SD 2.0 and 1.0 or SPI |
| Data transfer rate | up to 44MB/s Sustained Read¹ up to 34MB/s Sustained Write¹ |
| I/O Performance | up to 1100 IOPS (Random Read) and 250 IOPS (Random Write) (depends on capacity) |
| Capacities | 4, 8, 16, 32, 64GB |
| Flash Technology | Multi Level Cell (MLC) |
| Additional configuration | CPRM Support |
| Flash Management | ECC, Static Wear Leveling Bad Block Management Garbage Collection Enhanced Power Cycling |
| Data integrity | no information |
| Voltage | 2,7 – 3,6V |
| Power consumption | Operating: max. 125mA Standby: max. 170µA |
| Temperature range | -25 up to 85°C (Standard Temp.) |
| MTBF | >3 Mio. hours |
| Endurance (TBW) | 21,6TB (8GB) up to 172,8TB (64GB) Sequential Write |
| Warranty | 2 years |
| on request |
| Dimension | 11 x 15 x 1mm |
| Interface | SD 3.0 or SPI |
| Data transfer rate | up to 85MB/s Sustained Read¹ up to 68MB/s Sustained Write¹ |
| I/O Performance | no information |
| Capacities | 8, 16, 32, 64GB |
| Flash Technology | Multi Level Cell (MLC) |
| Additional configuration | CPRM Support Integrated write protect mechanism Pass word protection(optional) |
| Flash Management | ECC, Global Wear Leveling Bad Block Management Protection against voltage drops |
| Data integrity | 10 years |
| Voltage | 2,7 – 3,6V |
| Power consumption | max. 164mA Standby: max 0,21mA |
| Temperature range | 0°C up to 70°C (Standard Temp.) -40°C up to 85°C (Industrie Temp.) |
| MTBF | >2 Mio. hours |
| Endurance (TBW) | no information |
| Warranty | 1 year |
| on request |
Technical details are subject to change without prior notice